Alexey Nezhdanov

Нежданов Алексей ВладимировичIRCIMA Senior researcher, assistant at the chair of Semi-Conductors and Optical electronics

Birth day: 28.02.1979

Post: IRCIMA Senior researcher

Telephone: (831) 462-33-14

E-mail: nezhdanov@phys.unn.ru

ICQ: 123-638-782

Thesis: -

Research interests: solid state physics, non-crystalline semiconductor physics, nanostructures.

Primary publications:

  • Influence of Plasma-Enhanced Chemical Vapor Deposition Parameters on Characteristics of As–Te Chalcogenide Films / L. Mochalov, A. Nezhdanov, M. Kudryashov, A. Logunov, A. Strikovskiy, M. Gushchin, G. Chidichimo, G. De Filpo, A. Mashin // Plasma Chem. Plasma Process. 2017. Vol. 37. P. 1417–1429.
  • Synthesis and properties of AsxTe100−x films prepared by plasma deposition via elemental As and Te / L. Mochalov, A.Nezhdanov, A. Strikovskiy, M. Gushin, G. Chidichimo, G. De Filpo, A. Mashin // Opt. Quant. Electron. 2017.  Vol. 49:274.
  • Comparative study of nonlinear optical properties of Ge-S-I glasses with different macrocompositions / D.A. Yashunin, А.P. Velmuzhov, А.V. Nezhdanov, А.А. Murzanev, Yu.А. Malkov, M.А. Kudryashov, А.I. Mashin, L.А. Mochalov, А.S. Lobanov, А.I. Korytin, A.V. Vorotyntsev, V.М. Vorotyntsev, А.N. Stepanov // J. Non-Cryst. Solids. 2016. Vol. 453. P. 84–87.
  • Influence of the preparation technique on the optical properties and content of heterophase inclusions of AS2S3 chalcogenide glasses / L.A. Mochalov, A.S. Lobanov, A.V. Nezhdanov, A.I. Mashin, M.A. Kudryashov, A.V. Strikovskiy, A.V. Kostrov, A.V. Vorotyntsev, V.M. Vorotyntsev // Optical Materials Express. 2016. Vol. 6. P. 3507–3517.
  • Comparison of optical properties and impurities content of Ge-Sb-S-I glasses prepared by different methods / L.A. Mochalov, A.S. Lobanov, A.V. Nezhdanov, M.A. Kudryashov, A.I. Mashin, A.N. Stepanov, A.I. Korytin, A.V. Vorotyntsev, V.M. Vorotyntsev // Optical Materials Express. 2016. Vol. 6. P. 3759-3765.
  • Preparation of Silicon Thin Films of Different Phase Composition from Monochlorosilane as a Precursor by RF Capacitive Plasma Discharge / L.A. Mochalov, R.A. Kornev, A.V. Nezhdanov, A.I. Mashin, A.S. Lobanov, A.V. Kostrov, V.M. Vorotyntsev, A.V. Vorotyntsev // Plasma Chem. Plasma Process. 2016. Vol. 36. P. 849–856.
  • PECVD synthesis of As–S glasses / A.V. Vorotyntsev, L.A. Mochalov, A.S. Lobanov, A.V. Nezhdanov, V.M. Vorotyntsev, A.I. Mashin // Russian Journal of Applied Chemistry. 2016. Vol. 89. P. 179–184.
  • Raman spectroscopy of amorphous silicon subjected to laser annealing / A.V. Nezhdanov, A.Yu. Afanaskin, A.V. Ershov, A.I. Mashin // Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 2012. Vol. 6. P. 1–5.
  • The Morphology, Electron Structure, and Optical Properties of Self-Assembled Silicon Nanostructures on the Surface of Highly Oriented Pyrolytic Graphite / A.V. Nezhdanov, D.O. Filatov, D.A. Antonov, S.Yu. Zubkov, A.I. Mashin, A.V. Ershov // Semiconductors. 2011. Vol 45. P. 56–60
  • The Structure and Properties of the Si Nanostructures on an HOPG Surface / D.O. Filatov, D.A. Antonov, S.Yu. Zubkov, A.V. Nezhdanov, A.I. Mashin // Bulletin of the Russian Academy of Sciences: Physics. 2011. Vol. 75. P. 12–16.
  • Silicon nanowires. Structure and Properties / A.V. Nezhdanov, A.I. Mashin, A.G. Razuvayev, A.V. Ershov, S.K. Ignatov // Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 2006. N. 2. P. 36–39 [in Russian].
  • Electronic structure and optical properties of ion-implanted silicon / A.S. Mikhaylov, A.V. Nezhdanov, L.A. Medyntsev, A.I. Mashin, A.F. Khokhlov // Vestnik Nizhegorodskogo universiteta.  2003. Vol. 1(6). P. 12–20 [in Russian].

Biography:

Alexey Nezhdanov was born on February 28, 1979 in USSA. In 1996 he graduated from the school No. 169 and entered Physics Department of Lobachevsky University. In 2001 Alexey Nezhdanov graduated from the University with a degree in "Microelectronics and Semiconductor Devices". In July of the same year he entered postgraduate study at Lobachevsky University. Currently working on a thesis for the degree of physical and mathematical sciences candidate on specialty "Physics of Semiconductors". Scientific adviser is prof. Aleksandr Mashin.