2015

  1. Formation of Si nanocrystals in multilayered nanoperiodic Al2O3/SiOx/Al2O3/SiOx/.../Si(100) structures: Synchrotron and photoluminescence data / S.Yu. Turishchev, V.A. Terekhov, D.A. Koyuda, D.E. Spirin, E.V. Parinova, D.N. Nesterov, D.A. Grachev, I.A. Karabanova, A.V. Ershov, A.I. Mashin, E.P. Domashevskaya // Semiconductors. 2015. Vol. 49. P. 409–413.
  2. Nitride surface passivation of GaAs nanowires: Impact on surface state density / P.A. Alekseev, M.S. Dunaevskiy, V.P. Ulin, T.V. Lvova, D.O. Filatov, A.V. Nezhdanov, A.I. Mashin, V.L. Berkovits // Nano Lett. 2015. Vol. 15. P. 63–68.
  3. Raman spectroscopy of InGaAs/GaAs nanoheterostructures delta-doped with Mn / S.M. Plankina, O.V. Vikhrova, Yu.A. Danilov, B.N. Zvonkov, I.L. Kalentyeva, A.V. Nezhdanov, I.I. Chunin, P.A. Yunin // Semiconductors. 2015. Vol. 49. P. 99–103.
  4. Characteristics of fullerene-based diode structures on polymer and glass substrates / V.V. Travkin, G.L. Pakhomov, M.N. Drozdov, S.A. Korolev, A.I. Mashin, A.A. Logunov // Semiconductors. 2015. Vol. 49. P. 134–137.
  5. Preparation of Ge-S-I and Ge-Sb-S-I glasses by Plasma-enhanced Chemical Vapor Deposition / L.A. Mochalov, A.S. Lobanov, A.V. Nezhdanov, A.V. Kostrov, V.M. Vorotyntsev // Journal of Non-Crystalline Solids. 2015. Vol. 423–424. P. 76–80.